| PART |
Description |
Maker |
| S70WS512N00BAWA30 S70WS512N000BAWA33 |
32M X 16 FLASH 1.8V PROM, 80 ns, PBGA84
Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
|
SPANSION LLC
|
| LH5332600 LH5332600N LH5332600T |
CMOS 32M(4M X 8/2M X 16) Mask-Programmable ROM
CMOS 32M (4M X 8/2M X 16) MROM
|
Sharp Electrionic Components
Sharp Corporation
|
| IBM13M32734BCB |
32M x 72 2-Bank Registered SDRAM Module(32M x 72 2组寄存同步动态RAM模块) 32M × 72配置2，银行注册内存模块（32M × 72配置2组寄存同步动态内存模块）
|
International Business Machines, Corp.
|
| IBM13M32734BCA |
32M x 72 2-Bank Registered SDRAM Module(32M x 72 2组寄存同步动态RAM模块) 32M × 72配置2，银行注册内存模块（32M × 72配置2组寄存同步动态内存模块）
|
International Business Machines, Corp.
|
| MX25L3208EZNI12G MX25L3208EM2I12G |
32M-BIT [x 1 / x 2] CMOS SERIAL FLASH
|
Macronix International
|
| TC58V32FT |
32M-Bit CMOS NAND EPROM
|
Toshiba Semiconductor
|
| KM23C32000 |
32M-Bit (2Mx16) CMOS Mask ROM
|
Samsung Semiconductor
|
| KM23C32205BSG |
32M-Bit(2Mx16 / 1Mx32) CMOS Mask ROM
|
Samsung Semiconductor
|
| MX25U3235E MX25U3235EZNI10G MX25U3235EM2I10G |
32M-BIT [x 1/x 2/x 4] 1.8V CMOS MXSMIO? (SERIAL MULTI I/O) FLASH MEMORY
|
Macronix International
|
| K3N6C4000E-DC |
32M-Bit (2Mx16) CMOS MASK ROM Data Sheet
|
Samsung Electronic
|
